64-1905-23 [Discontinued]NDS356AP P-Channel MOSFET, 1.1 A, 30 V, 3-Pin SOT-23 ON Semiconductor NDS356AP
Features
- Enhancement Mode P-Channel MOSFET, ON Semiconductor. ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. Features and Benefits:. Voltage controlled P-Channel small signal switch High-Density cell design High saturation current Superior switching Great rugged and reliable performance DMOS technology. Applications:. Load Switching DC/DC converter Battery protection Power management control DC motor control
Spec
- Quantity:1bag(50pieces)
- Channel Type:P
- Maximum Continuous Drain Current:1.1 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:400 mΩ
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:500 mW
- Width:1.4mm
- CODE No.:917-5554
| Order No. | 64-1905-23 | |
|---|---|---|
| Model No. | NDS356AP | |
| Standard price |
JPY: 2,120
USD: 13.29
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]NDS356AP P-Channel MOSFET, 1.1 A, 30 V, 3-Pin SOT-23 ON Semiconductor NDS356AP](https://aimg.as-1.co.jp/c/64/1905/23/64190523.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)