64-1899-86 [Discontinued]VNS1NV04DP-E Dual N-Channel MOSFET, 3.5 A, 40 V OMNIFET, 8-Pin SOIC STMicroelectronics VNS1NV04DP-E
Features
- OMNIFET Fully Auto-Protected Power MOSFET, STMicroelectronics. The OMNIFET series of fully auto-protected low-side drivers, are measured on the criteria of ruggedness and improved reliability. These solid state power switches are designed for inductive or resistive loads, especially in the automotive environment. Linear current limitation Thermal shut down Short circuit protection ESD protection Integrated clamp
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.5 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:500 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:0.5V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:4 W
- Number of Elements per Chip:2
- CODE No.:917-2797
| Order No. | 64-1899-86 | |
|---|---|---|
| Model No. | VNS1NV04DP-E | |
| Standard price |
JPY: 1,510
USD: 9.40
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]VNS1NV04DP-E Dual N-Channel MOSFET, 3.5 A, 40 V OMNIFET, 8-Pin SOIC STMicroelectronics VNS1NV04DP-E](https://aimg.as-1.co.jp/c/64/1899/86/64189985.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)