64-1898-07 ［Discontinued］IXFH80N65X2 N-Channel MOSFET, 80 A, 650 V HiperFET, X2-Class, 3-Pin TO-247 IXYS IXFH80N65X2
Features
- N-channel Power MOSFET, IXYS HiPerFET™ X2 Series. The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control. Very low RDS(on) and QG (gate charge) Fast intrinsic rectifier diode Low intrinsic gate resistance Low package inductance Industry standard packages
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:38 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:2.7V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:890 W
- Width:21.34mm
- CODE No.:917-1439
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Model No.Model No. class="init">
64-1898-07 ［Discontinued］IXFH80N65X2 N-Channel MOSFET, 80 A, 650 V HiperFET, X2-Class, 3-Pin TO-247 IXYS IXFH80N65X2特徴
仕様
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