IXYS

64-1898-06 IXTH80N65X2 N-Channel MOSFET, 80 A, 650 V X2-Class, 3-Pin TO-247 IXYS IXTH80N65X2

Features

  • N-channel Power MOSFET, IXYS X2-Class Series. The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control. Very low RDS(on) and QG (gate charge) Intrinsic rectifier diode Low intrinsic gate resistance Low package inductance Industry standard packages

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:80 A
  • Maximum Drain Source Voltage:650 V
  • Maximum Drain Source Resistance:38 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Minimum Gate Threshold Voltage:2.7V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:TO-247
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:890 W
  • Typical Turn-On Delay Time:36 ns
  • CODE No.:917-1435
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Order No. 64-1898-06
Model No. IXTH80N65X2
Standard price JPY: 2,650 USD: 16.61
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier Stock