64-1889-24 IRFR4510TRPBF N-Channel MOSFET, 63 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR4510TRPBF
特徴
- N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:63 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:13.9 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:143 W
- Typical Input Capacitance @ Vds:3031 pF @ 50 V
- CODE No.:915-5011
| アズワン品番 | 64-1889-24 | |
|---|---|---|
| 型番 | IRFR4510TRPBF | |
| 標準価格 |
JPY: 2,370
USD: 14.86
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| 入り数 | 1bag(10pieces) | |
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