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• 64-1889-22 ［Discontinued］IRFH8316TRPBF N-Channel MOSFET, 120 A, 30 V HEXFET, 8-Pin PQFN Infineon　IRFH8316TRPBF

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• 64-1889-22 ［Discontinued］IRFH8316TRPBF N-Channel MOSFET, 120 A, 30 V HEXFET, 8-Pin PQFN Infineon　IRFH8316TRPBF

Infineon

64-1889-22　［Discontinued］IRFH8316TRPBF N-Channel MOSFET, 120 A, 30 V HEXFET, 8-Pin PQFN Infineon　IRFH8316TRPBF

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特徴

• N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

• Quantity:1bag(20pieces)
• Channel Type:N
• Maximum Continuous Drain Current:120 A
• Maximum Drain Source Voltage:30 V
• Maximum Drain Source Resistance:4.3 mΩ
• Maximum Gate Threshold Voltage:2.2V
• Minimum Gate Threshold Voltage:1.2V
• Maximum Gate Source Voltage:-20 V, +20 V
• Package Type:PQFN
• Mounting Type:Surface Mount
• Pin Count:8
• Channel Mode:Enhancement
• Category:Power MOSFET
• Maximum Power Dissipation:59 W
• Typical Turn-Off Delay Time:20 ns
• CODE No.:915-5008
•  

アズワン品番	64-1889-22
型番	IRFH8316TRPBF
標準価格	JPY: 1,770 USD: 11.10 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1bag(20pieces)
在庫数	-

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