64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF
FeaturesFeatures class="init">
［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF 64-1889-19 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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Infineon
64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF
-
FeaturesFeatures class="init">
［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF 64-1889-19 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF
-
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:43 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:13.5 mΩ
- Maximum Gate Threshold Voltage:2.35V
- Minimum Gate Threshold Voltage:1.35V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:28 W
- Typical Turn-On Delay Time:8.3 ns
- CODE No.:165-8217
-
Order No.Order No.ss="init">
［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF 64-1889-19 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF
-
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:43 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:13.5 mΩ
- Maximum Gate Threshold Voltage:2.35V
- Minimum Gate Threshold Voltage:1.35V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:28 W
- Typical Turn-On Delay Time:8.3 ns
- CODE No.:165-8217
-
Order No.ASONEs="init">
［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF 64-1889-19 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF
-
Features
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:43 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:13.5 mΩ
- Maximum Gate Threshold Voltage:2.35V
- Minimum Gate Threshold Voltage:1.35V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:28 W
- Typical Turn-On Delay Time:8.3 ns
- CODE No.:165-8217
-
Order No.
64-1889-19
Model No.
IRFHM8334TRPBF
Standard price
JPY: 152,000
USD: 945.74
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1set(4000pieces)
Stock in Japan
-
64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF
FeaturesFeatures class="init">
［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF 64-1889-19 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF
-
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:43 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:13.5 mΩ
- Maximum Gate Threshold Voltage:2.35V
- Minimum Gate Threshold Voltage:1.35V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:28 W
- Typical Turn-On Delay Time:8.3 ns
- CODE No.:165-8217
-
Order No.Order No.ss="init">
［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF 64-1889-19 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF
-
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:43 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:13.5 mΩ
- Maximum Gate Threshold Voltage:2.35V
- Minimum Gate Threshold Voltage:1.35V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:28 W
- Typical Turn-On Delay Time:8.3 ns
- CODE No.:165-8217
-
Order No.ASONEs="init">
［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF 64-1889-19 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF
-
Features
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:43 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:13.5 mΩ
- Maximum Gate Threshold Voltage:2.35V
- Minimum Gate Threshold Voltage:1.35V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:28 W
- Typical Turn-On Delay Time:8.3 ns
- CODE No.:165-8217
-
Order No.
64-1889-19
Model No.
IRFHM8334TRPBF
Standard price
JPY: 152,000
USD: 945.74
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1set(4000pieces)
Stock in Japan
-
64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:43 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:13.5 mΩ
- Maximum Gate Threshold Voltage:2.35V
- Minimum Gate Threshold Voltage:1.35V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:28 W
- Typical Turn-On Delay Time:8.3 ns
- CODE No.:165-8217
Order No.Order No.ss="init">
64-1889-19 ［Discontinued］IRFHM8334TRPBF N-Channel MOSFET, 43 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM8334TRPBF特徴
仕様
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