64-1889-17 ［Discontinued］IRF9953TRPBF Dual P-Channel MOSFET, 2.3 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9953TRPBF
Features
- Dual P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual P-channel configuration.
Spec
- Quantity:1set(4000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:2.3 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:400 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Maximum Operating Temperature:+150 °C
- CODE No.:165-8283
| Order No. | 64-1889-17 | |
|---|---|---|
| Model No. | IRF9953TRPBF | |
| Standard price |
JPY: 144,000
USD: 902.65
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |