Infineon

64-1889-15　［Discontinued］IRFH3702TRPBF N-Channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN Infineon　IRFH3702TRPBF

Features

N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

Quantity:1set(4000pieces)
Channel Type:N
Maximum Continuous Drain Current:42 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:11.8 mΩ
Maximum Gate Threshold Voltage:2.35V
Minimum Gate Threshold Voltage:1.35V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:PQFN
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.8 W
Minimum Operating Temperature:-55 °C
CODE No.:165-8215

Order No. 64-1889-15

Model No.Model No. class="init"> ［Discontinued］IRFH3702TRPBF N-Channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN Infineon　IRFH3702TRPBF 64-1889-15 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

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Infineon

64-1889-15　［Discontinued］IRFH3702TRPBF N-Channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN Infineon　IRFH3702TRPBF

印刷

特徴

N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1set(4000pieces)
Channel Type:N
Maximum Continuous Drain Current:42 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:11.8 mΩ
Maximum Gate Threshold Voltage:2.35V
Minimum Gate Threshold Voltage:1.35V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:PQFN
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.8 W
Minimum Operating Temperature:-55 °C
CODE No.:165-8215

アズワン品番 64-1889-15

型番 IRFH3702TRPBF

Standard price

JPY: 130,260 USD: 810.48

Excange rate 1USD= 160.72JPY
Valid price in Japan

QuantityQuantityass="init"> ［Discontinued］IRFH3702TRPBF N-Channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN Infineon　IRFH3702TRPBF 64-1889-15 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

Infineon

64-1889-15　［Discontinued］IRFH3702TRPBF N-Channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN Infineon　IRFH3702TRPBF

印刷

特徴

N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1set(4000pieces)
Channel Type:N
Maximum Continuous Drain Current:42 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:11.8 mΩ
Maximum Gate Threshold Voltage:2.35V
Minimum Gate Threshold Voltage:1.35V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:PQFN
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.8 W
Minimum Operating Temperature:-55 °C
CODE No.:165-8215

アズワン品番	64-1889-15
型番	IRFH3702TRPBF
標準価格	JPY: 130,260 USD: 810.48 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1set(4000pieces)

Stock in Japan	-

This page is the page of ［Discontinued］IRFH3702TRPBF N-Channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN Infineon sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

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How to use

User’s Guide
For Re-seller

For End-UserASONEs="init"> ［Discontinued］IRFH3702TRPBF N-Channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN Infineon　IRFH3702TRPBF 64-1889-15 【AXEL GLOBAL】 アズワン

Listed products : 3 milion products

How to use

Quote Other Requests

Infineon

64-1889-15　［Discontinued］IRFH3702TRPBF N-Channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN Infineon　IRFH3702TRPBF

Features

N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

Quantity:1set(4000pieces)
Channel Type:N
Maximum Continuous Drain Current:42 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:11.8 mΩ
Maximum Gate Threshold Voltage:2.35V
Minimum Gate Threshold Voltage:1.35V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:PQFN
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.8 W
Minimum Operating Temperature:-55 °C
CODE No.:165-8215

Order No.	64-1889-15
Model No.	IRFH3702TRPBF
Standard price	JPY: 130,260 USD: 810.48 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1set(4000pieces)

Stock in Japan	-