64-1889-02 ［Discontinued］IRF8915TRPBF Dual N-Channel MOSFET, 8.9 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF8915TRPBF
Features
- Dual N-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:8.9 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:27 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.7V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-8279
| Order No. | 64-1889-02 | |
|---|---|---|
| Model No. | IRF8915TRPBF | |
| Standard price |
JPY: 147,780
USD: 919.49
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |