64-1888-99 ［Discontinued］IRF7910TRPBF Dual N-Channel MOSFET, 10 A, 12 V HEXFET, 8-Pin SOIC Infineon IRF7910TRPBF
Features
- Dual N-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:10 A
- Maximum Drain Source Voltage:12 V
- Maximum Drain Source Resistance:50 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Maximum Operating Temperature:+150 °C
- CODE No.:165-8053
| Order No. | 64-1888-99 | |
|---|---|---|
| Model No. | IRF7910TRPBF | |
| Standard price |
JPY: 261,000
USD: 1,636.06
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(4000pieces) | |
|
||
| Stock in Japan | - | |