64-1888-92 ［Discontinued］IRF7351TRPBF Dual N-Channel MOSFET, 8 A, 60 V HEXFET, 8-Pin SOIC Infineon IRF7351TRPBF
Features
- Dual N-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:17.8 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Maximum Operating Temperature:+150 °C
- CODE No.:168-8970
| Order No. | 64-1888-92 | |
|---|---|---|
| Model No. | IRF7351TRPBF | |
| Standard price |
JPY: 334,950
USD: 2,099.61
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |