64-1881-67 [Discontinued]IPW50R190CEFKSA1 N-Channel MOSFET, 18.5 A, 550 V CoolMOS CE, 3-Pin TO-247 Infineon IPW50R190CEFKSA1
Features
- Infineon CoolMOS™ CE Power MOSFET
Spec
- Quantity:1bag(6pieces)
- Channel Type:N
- Maximum Continuous Drain Current:18.5 A
- Maximum Drain Source Voltage:550 V
- Maximum Drain Source Resistance:190 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:127 W
- Typical Gate Charge @ Vgs:47.2 nC @ 10 V
- CODE No.:914-0236
| Order No. | 64-1881-67 | |
|---|---|---|
| Model No. | IPW50R190CEFKSA1 | |
| Standard price |
JPY: 1,450
USD: 9.09
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(6pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPW50R190CEFKSA1 N-Channel MOSFET, 18.5 A, 550 V CoolMOS CE, 3-Pin TO-247 Infineon IPW50R190CEFKSA1](https://aimg.as-1.co.jp/c/64/1881/67/64188166.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)