64-1881-62 IPP50R190CEXKSA1 N-Channel MOSFET, 18.5 A, 550 V CoolMOS CE, 3-Pin TO-220 Infineon IPP50R190CEXKSA1
Features
- Infineon CoolMOS™ CE Power MOSFET
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:18.5 A
- Maximum Drain Source Voltage:550 V
- Maximum Drain Source Resistance:190 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:127 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-8158
| Order No. | 64-1881-62 | |
|---|---|---|
| Model No. | IPP50R190CEXKSA1 | |
| Standard price |
JPY: 11,100
USD: 69.63
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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