64-1881-60 IPD80R1K0CEATMA1 N-Channel MOSFET, 5.7 A, 800 V CoolMOS CE, 3-Pin DPAK Infineon IPD80R1K0CEATMA1
Features
- Infineon CoolMOS™ CE Power MOSFET
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5.7 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:950 mΩ
- Maximum Gate Threshold Voltage:3.9V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:83 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-8015
| Order No. | 64-1881-60 | |
|---|---|---|
| Model No. | IPD80R1K0CEATMA1 | |
| Standard price |
JPY: 374,000
USD: 2,327.03
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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