64-1881-55 Infineon 650V 80A, Silicon Junction Diode, 3-Pin TO-247 IDW40E65D2FKSA1 IDW40E65D2FKSA1
Features
- Fast Switching Emitter Controlled Diodes, Infineon. The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.. Rapid 1 diode switches between 18kHz and 40kHz 1.35V temperature-stable forward voltage Ideal for Power Factor Correction (PFC) topologies The Rapid 2 diode switches between 40 kHz and 100 kHz Low reverse recovery charge: forward voltage ratio for BiC performance Low reverse recovery time Low turn-on losses on the boost switch Ultra-fast Diode 600 V/1200 V Emitter Controlled technology Qualified according to JEDEC Standard Good EMI behaviour Low conduction losses Easy paralleling
Spec
- Quantity:1bag(6pieces)
- Diode Configuration:Single
- Number of Elements per Chip:1
- Peak Reverse Repetitive Voltage:650V
- Mounting Type:Through Hole
- Package Type:TO-247
- Diode Type:Silicon Junction
- Pin Count:3
- Maximum Forward Voltage Drop:2.3V
- Peak Reverse Recovery Time:83ns
- Peak Non-Repetitive Forward Surge Current:250A
- CODE No.:914-0214
| Order No. | 64-1881-55 | |
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| Model No. | IDW40E65D2FKSA1 | |
| Standard price |
JPY: 2,990
USD: 18.74
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(6pieces) | |
| Stock in Japan |
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| Supplier Stock |
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