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[Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1 64-1881-37 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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  • 64-1881-37 [Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1
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  • 64-1881-37 [Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1
Infineon

64-1881-37 [Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1

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  • [Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1

Features

  • Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

Spec

  • Quantity:1bag(40pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:39 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:30 mΩ
  • Maximum Gate Threshold Voltage:1.9V
  • Minimum Gate Threshold Voltage:3.1V
  • Maximum Gate Source Voltage:-25 V, +25 V
  • Package Type:PG-TDSON
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:40 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:914-0176
  •  
Order No.Order No.ss="init"> [Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1 64-1881-37 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 64-1881-37 [Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • RS Components
  • 64-1881-37 [Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1
Infineon

64-1881-37 [Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1

  • 印刷
  • PDF
  • [Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1

特徴

  • Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

仕様

  • Quantity:1bag(40pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:39 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:30 mΩ
  • Maximum Gate Threshold Voltage:1.9V
  • Minimum Gate Threshold Voltage:3.1V
  • Maximum Gate Source Voltage:-25 V, +25 V
  • Package Type:PG-TDSON
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:40 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:914-0176
  •  
アズワン品番 64-1881-37
型番 BSZ180P03NS3EGATMA1
Standard price JPY: 1,600 USD: 10.04
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1bag(40pieces)
  <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
Stock in Japan -

[$1][Discontinued]BSZ180P03NS3EGATMA1 P-Channel MOSFET, 39 A, 30 V OptiMOS P, 8-Pin PG-TDSON Infineon[/$1]

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