Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
Spec
Quantity:1bag(20pieces)
Channel Type:N
Maximum Continuous Drain Current:100 A
Maximum Drain Source Voltage:40 V
Maximum Drain Source Resistance:1.9 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:PG-TDSON
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:125 W
Typical Turn-Off Delay Time:33 ns
CODE No.:914-0172
Order No.
64-1881-35
Model No.Model No. class="init">
64-1881-35 BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
