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64-1881-34 BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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  • 64-1881-34 BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1
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  • 64-1881-34 BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1
Infineon

64-1881-34 BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1

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  • BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1

Features

  • Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

仕様

  • Quantity:1set(5000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:100 A
  • Maximum Drain Source Voltage:40 V
  • Maximum Drain Source Resistance:1.9 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:PG-TDSON
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:125 W
  • Typical Turn-Off Delay Time:33 ns
  • CODE No.:165-8051
  •  
Order No. 64-1881-34
Model No. BSC019N04NSGATMA1
Standard price JPY: 638,000 USD: 4,002.01
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1set(5000pieces)
Stock in Japan
Supplier Stock

[$1]BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon[/$1]

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  • User’s GuideUser’s Guide"> 64-1881-34 BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 64-1881-34 BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • RS Components
    • 64-1881-34 BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1
    Infineon

    64-1881-34 BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1

    • 印刷
    • PDF
    • BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon BSC019N04NSGATMA1

    特徴

    • Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

    仕様

    • Quantity:1set(5000pieces)
    • Channel Type:N
    • Maximum Continuous Drain Current:100 A
    • Maximum Drain Source Voltage:40 V
    • Maximum Drain Source Resistance:1.9 mΩ
    • Maximum Gate Threshold Voltage:4V
    • Minimum Gate Threshold Voltage:2V
    • Maximum Gate Source Voltage:-20 V, +20 V
    • Package Type:PG-TDSON
    • Mounting Type:Surface Mount
    • Transistor Configuration:Single
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:125 W
    • Typical Turn-Off Delay Time:33 ns
    • CODE No.:165-8051
    •  
    アズワン品番 64-1881-34
    型番 BSC019N04NSGATMA1
    標準価格 JPY: 638,000 USD: 4,002.01
    Excange rate 1USD= 159.42JPY
    Valid price in Japan
    入り数 1set(5000pieces)
    在庫数
    サプライヤ在庫

    [$1]BSC019N04NSGATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON Infineon[/$1]

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