64-1862-01 ［Discontinued］IPB60R190C6ATMA1 N-Channel MOSFET, 20.2 A, 650 V CoolMOS C6, 3-Pin D2PAK Infineon IPB60R190C6ATMA1
Features
- Infineon CoolMOS™C6/C7 Power MOSFET
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:20.2 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:190 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:151 W
- Typical Input Capacitance @ Vds:1400 pF @ 100 V
- CODE No.:911-4990
| Order No. | 64-1862-01 | |
|---|---|---|
| Model No. | IPB60R190C6ATMA1 | |
| Standard price |
JPY: 226,000
USD: 1,416.66
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
|
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| Stock in Japan | - | |