64-1861-99 ［Discontinued］IPB60R099CPATMA1 N-Channel MOSFET, 31 A, 650 V CoolMOS CP, 3-Pin D2PAK Infineon IPB60R099CPATMA1
Features
- Infineon CoolMOS™CP Power MOSFET
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:31 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:99 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:255 W
- Minimum Operating Temperature:-55 °C
- CODE No.:911-4987
| Order No. | 64-1861-99 | |
|---|---|---|
| Model No. | IPB60R099CPATMA1 | |
| Standard price |
JPY: 613,000
USD: 3,842.54
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
|
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| Stock in Japan | - | |