64-1861-96 ［Discontinued］BSO615NGHUMA1 Dual N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 8-Pin SOIC Infineon BSO615NGHUMA1
Features
- Infineon SIPMOS® Dual N-Channel MOSFET
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.6 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:150 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:911-4965
| Order No. | 64-1861-96 | |
|---|---|---|
| Model No. | BSO615NGHUMA1 | |
| Standard price |
JPY: 183,000
USD: 1,147.12
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(2500pieces) | |
|
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| Stock in Japan | - | |