64-1861-96 ［Discontinued］BSO615NGHUMA1 Dual N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 8-Pin SOIC Infineon BSO615NGHUMA1
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［Discontinued］BSO615NGHUMA1 Dual N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 8-Pin SOIC Infineon BSO615NGHUMA1 64-1861-96 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1861-96 ［Discontinued］BSO615NGHUMA1 Dual N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 8-Pin SOIC Infineon BSO615NGHUMA1
Features
- Infineon SIPMOS® Dual N-Channel MOSFET
仕様
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.6 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:150 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:911-4965
Order No. 64-1861-96 Model No.Model No. class="init"> ［Discontinued］BSO615NGHUMA1 Dual N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 8-Pin SOIC Infineon BSO615NGHUMA1 64-1861-96 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1861-96 ［Discontinued］BSO615NGHUMA1 Dual N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 8-Pin SOIC Infineon BSO615NGHUMA1
特徴
- Infineon SIPMOS® Dual N-Channel MOSFET
仕様
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.6 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:150 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:911-4965
アズワン品番 64-1861-96 型番 BSO615NGHUMA1 Standard price JPY: 183,000 USD: 1,147.91 Excange rate 1USD= 159.42JPY
Valid price in JapanQuantity 1set(2500pieces) 
［Discontinued］BSO615NGHUMA1 Dual N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 8-Pin SOIC Infineon BSO615NGHUMA1 64-1861-96 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1861-96 ［Discontinued］BSO615NGHUMA1 Dual N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 8-Pin SOIC Infineon BSO615NGHUMA1
特徴
- Infineon SIPMOS® Dual N-Channel MOSFET
仕様
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.6 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:150 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:911-4965
アズワン品番 64-1861-96 型番 BSO615NGHUMA1 標準価格 JPY: 183,000 USD: 1,147.91 Excange rate 1USD= 159.42JPY
Valid price in Japan入り数 1set(2500pieces)
Stock in Japan - -
