64-1861-89 [Discontinued]SPB11N60C3ATMA1 N-Channel MOSFET, 11 A, 650 V CoolMOS C3, 3-Pin D2PAK Infineon SPB11N60C3ATMA1
Features
- Infineon CoolMOS™C3 Power MOSFET
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:11 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:380 mΩ
- Maximum Gate Threshold Voltage:3.9V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Minimum Operating Temperature:-55 °C
- CODE No.:911-4912
| Order No. | 64-1861-89 | |
|---|---|---|
| Model No. | SPB11N60C3ATMA1 | |
| Standard price |
JPY: 226,000
USD: 1,416.66
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SPB11N60C3ATMA1 N-Channel MOSFET, 11 A, 650 V CoolMOS C3, 3-Pin D2PAK Infineon SPB11N60C3ATMA1](https://aimg.as-1.co.jp/c/64/1861/89/64186189.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)