64-1861-82 SPD08P06PGBTMA1 P-Channel MOSFET, 8.83 A, 60 V SIPMOS, 3-Pin DPAK Infineon SPD08P06PGBTMA1
Features
- Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant
Spec
- Quantity:1set(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8.83 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:300 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:42 W
- Minimum Operating Temperature:-55 °C
- CODE No.:911-4824
| Order No. | 64-1861-82 | |
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| Model No. | SPD08P06PGBTMA1 | |
| Standard price |
JPY: 176,000
USD: 1,103.24
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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