64-1860-31 ［Discontinued］IPB123N10N3GATMA1 N-Channel MOSFET, 58 A, 100 V OptiMOS 3, 3-Pin D2PAK Infineon IPB123N10N3GATMA1
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［Discontinued］IPB123N10N3GATMA1 N-Channel MOSFET, 58 A, 100 V OptiMOS 3, 3-Pin D2PAK Infineon IPB123N10N3GATMA1 64-1860-31 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1860-31 ［Discontinued］IPB123N10N3GATMA1 N-Channel MOSFET, 58 A, 100 V OptiMOS 3, 3-Pin D2PAK Infineon IPB123N10N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
仕様
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:58 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:23.5 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:94 W
- Typical Input Capacitance @ Vds:1880 pF @ 50 V
- CODE No.:911-0913
アズワン品番 64-1860-31 型番 IPB123N10N3GATMA1 標準価格 JPY: 121,000 USD: 759.00 Excange rate 1USD= 159.42JPY
Valid price in JapanQuantity 1set(1000pieces) 
Stock in Japan - -
