64-1860-31 ［Discontinued］IPB123N10N3GATMA1 N-Channel MOSFET, 58 A, 100 V OptiMOS 3, 3-Pin D2PAK Infineon IPB123N10N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:58 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:23.5 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:94 W
- Typical Input Capacitance @ Vds:1880 pF @ 50 V
- CODE No.:911-0913
| Order No. | 64-1860-31 | |
|---|---|---|
| Model No. | IPB123N10N3GATMA1 | |
| Standard price |
JPY: 121,000
USD: 758.48
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
|
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| Stock in Japan | - | |