64-1860-29 IPB027N10N3GATMA1 N-Channel MOSFET, 120 A, 100 V OptiMOS 3, 3-Pin D2PAK Infineon IPB027N10N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:120 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:4.5 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:300 W
- Minimum Operating Temperature:-55 °C
- CODE No.:911-0890
| Order No. | 64-1860-29 | |
|---|---|---|
| Model No. | IPB027N10N3GATMA1 | |
| Standard price |
JPY: 569,000
USD: 3,566.73
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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