64-1860-28 ［Discontinued］IPB60R165CPATMA1 N-Channel MOSFET, 21 A, 650 V CoolMOS CP, 3-Pin D2PAK Infineon IPB60R165CPATMA1
Features
- Infineon CoolMOS™CP Power MOSFET
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:21 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:165 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:192 W
- Length:10.312mm
- CODE No.:911-0888
| Order No. | 64-1860-28 | |
|---|---|---|
| Model No. | IPB60R165CPATMA1 | |
| Standard price |
JPY: 343,000
USD: 2,150.07
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
|
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| Stock in Japan | - | |