64-1860-26 [Discontinued]IPP60R199CPXKSA1 N-Channel MOSFET, 16 A, 650 V CoolMOS CP, 3-Pin TO-220 Infineon IPP60R199CPXKSA1
Features
- Infineon CoolMOS™CP Power MOSFET
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:16 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:490 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:139 W
- Dimensions:10.36 x 4.57 x 15.95mm
- CODE No.:911-0872
| Order No. | 64-1860-26 | |
|---|---|---|
| Model No. | IPP60R199CPXKSA1 | |
| Standard price |
JPY: 18,910
USD: 117.66
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPP60R199CPXKSA1 N-Channel MOSFET, 16 A, 650 V CoolMOS CP, 3-Pin TO-220 Infineon IPP60R199CPXKSA1](https://aimg.as-1.co.jp/c/64/1860/26/64186026.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)