64-1860-23 [Discontinued]IPB200N15N3GATMA1 N-Channel MOSFET, 50 A, 150 V OptiMOS 3, 3-Pin D2PAK Infineon IPB200N15N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:50 A
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:150 W
- Typical Turn-On Delay Time:14 ns
- CODE No.:911-0834
| Order No. | 64-1860-23 | |
|---|---|---|
| Model No. | IPB200N15N3GATMA1 | |
| Standard price |
JPY: 322,000
USD: 2,018.43
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPB200N15N3GATMA1 N-Channel MOSFET, 50 A, 150 V OptiMOS 3, 3-Pin D2PAK Infineon IPB200N15N3GATMA1](https://aimg.as-1.co.jp/c/64/1860/23/64186023.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)