64-1842-28 ［Discontinued］Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD IRG7PH35UD-EP
Features
- Co-Pack IGBT over 21A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Spec
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:50 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±30V
- Maximum Power Dissipation:180 W
- Package Type:TO-247AD
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:15.87mm
- Width:5.31mm
- Height:20.7mm
- Dimensions:15.87 x 5.31 x 20.7mm
- Energy Rating:2150µJ
- CODE No.:907-4861
| Order No. | 64-1842-28 | |
|---|---|---|
| Model No. | IRG7PH35UD-EP | |
| Standard price |
JPY: 1,990
USD: 12.48
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
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| Stock in Japan | - | |