64-1839-92 ［Discontinued］BSC014N03MSGATMA1 N-Channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon BSC014N03MSGATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
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［Discontinued］BSC014N03MSGATMA1 N-Channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon BSC014N03MSGATMA1 64-1839-92 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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Infineon
64-1839-92 ［Discontinued］BSC014N03MSGATMA1 N-Channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon BSC014N03MSGATMA1
-
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:1.75 mΩ
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:139 W
- Maximum Operating Temperature:+150 °C
- CODE No.:906-4435
-
Order No.
64-1839-92
型番
BSC014N03MSGATMA1
標準価格
JPY: 1,590
USD: 9.89
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1bag(10pieces)
在庫数
-
64-1839-92 ［Discontinued］BSC014N03MSGATMA1 N-Channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon BSC014N03MSGATMA1
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:1.75 mΩ
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:139 W
- Maximum Operating Temperature:+150 °C
- CODE No.:906-4435
| Order No. | 64-1839-92 | |
|---|---|---|
| 型番 | BSC014N03MSGATMA1 | |
| 標準価格 |
JPY: 1,590
USD: 9.89
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
|
||
| 在庫数 | - | |