64-1839-83 BSC900N20NS3GATMA1 N-Channel MOSFET, 15.2 A, 200 V OptiMOS 3, 8-Pin TDSON Infineon BSC900N20NS3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:15.2 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:90 mΩ
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:62.5 W
- Number of Elements per Chip:1
- CODE No.:906-4400
| Order No. | 64-1839-83 | |
|---|---|---|
| Model No. | BSC900N20NS3GATMA1 | |
| Standard price |
JPY: 2,650
USD: 16.61
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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