64-1839-62 IPT020N10N3ATMA1 N-Channel MOSFET, 300 A, 100 V OptiMOS 3, 8-Pin HSOF Infineon IPT020N10N3ATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(2000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:300 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:3.7 mΩ
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:HSOF
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:375 W
- Typical Turn-On Delay Time:34 ns
- CODE No.:178-7450
| Order No. | 64-1839-62 | |
|---|---|---|
| Model No. | IPT020N10N3ATMA1 | |
| Standard price |
JPY: 1,058,000
USD: 6,631.98
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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