64-1839-44 BSB028N06NN3GXUMA1 N-Channel MOSFET, 90 A, 60 V OptiMOS 3, 7-Pin WDSON Infineon BSB028N06NN3GXUMA1
特徴
- Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:90 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:2.8 mΩ
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:WDSON
- Mounting Type:Surface Mount
- Pin Count:7
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:78 W
- Width:5.05mm
- CODE No.:906-4306
| アズワン品番 | 64-1839-44 | |
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| Model No. | BSB028N06NN3GXUMA1 | |
| Standard price |
JPY: 3,540
USD: 22.21
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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