Infineon

64-1838-22 Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247 IKW25N120H3FKSA1

Features

  • Infineon TrenchStop IGBT Transistors, 1100 to 1600V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 1100 to 1600V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C

Spec

  • Quantity:1bag(2pieces)
  • Maximum Continuous Collector Current:50 A
  • Maximum Collector Emitter Voltage:1200 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:326 W
  • Package Type:TO-247
  • Mounting Type:Through Hole
  • Channel Type:N
  • Pin Count:3
  • Transistor Configuration:Single
  • Length:16.13mm
  • Width:5.21mm
  • Height:21.1mm
  • Dimensions:16.13 x 5.21 x 21.1mm
  • Energy Rating:4.3mJ
  • CODE No.:906-2892
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Order No. 64-1838-22
Model No. IKW25N120H3FKSA1
Standard price JPY: 2,370 USD: 14.86
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(2pieces)
Stock in Japan
Supplier Stock