64-1838-22 Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247 IKW25N120H3FKSA1
Features
- Infineon TrenchStop IGBT Transistors, 1100 to 1600V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 1100 to 1600V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
Spec
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:50 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:326 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:16.13mm
- Width:5.21mm
- Height:21.1mm
- Dimensions:16.13 x 5.21 x 21.1mm
- Energy Rating:4.3mJ
- CODE No.:906-2892
| Order No. | 64-1838-22 | |
|---|---|---|
| Model No. | IKW25N120H3FKSA1 | |
| Standard price |
JPY: 2,370
USD: 14.86
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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