64-1814-66 ［Discontinued］SIHB28N60EF-GE3 N-Channel MOSFET, 28 A, 600 V EF Series, 3-Pin D2PAK Vishay SIHB28N60EF-GE3
Features
- N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)
Spec
- Quantity:1bag(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:28 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:123 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:250 W
- Minimum Operating Temperature:-55 °C
- CODE No.:177-7628
| Order No. | 64-1814-66 | |
|---|---|---|
| Model No. | SIHB28N60EF-GE3 | |
| Standard price |
JPY: 668,000
USD: 4,187.30
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(1000pieces) | |
|
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| Stock in Japan | - | |