64-1814-64 [Discontinued]SIHF28N60EF-GE3 N-Channel MOSFET, 28 A, 600 V EF Series, 3-Pin TO-220FP Vishay SIHF28N60EF-GE3
Features
- N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:28 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:123 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-220FP
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:39 W
- Maximum Operating Temperature:+150 °C
- CODE No.:178-0896
| Order No. | 64-1814-64 | |
|---|---|---|
| Model No. | SIHF28N60EF-GE3 | |
| Standard price |
JPY: 30,700
USD: 192.44
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SIHF28N60EF-GE3 N-Channel MOSFET, 28 A, 600 V EF Series, 3-Pin TO-220FP Vishay SIHF28N60EF-GE3](https://aimg.as-1.co.jp/c/64/1814/64/64181464.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)