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Vishay

64-1814-63　［Discontinued］SiHG28N60EF-GE3 N-Channel MOSFET, 28 A, 600 V EF Series, 3-Pin TO-247AC Vishay　SiHG28N60EF-GE3

Features

  • N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)

Spec

  • Quantity:1bag(2pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:28 A
  • Maximum Drain Source Voltage:600 V
  • Maximum Drain Source Resistance:123 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:TO-247AC
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:250 W
  • Maximum Operating Temperature:+150 °C
  • CODE No.:903-4497
  •  
Order No. 64-1814-63
Model No. SiHG28N60EF-GE3
Standard price JPY: 1,630 USD: 10.22
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(2pieces)
  Discontinued
Stock in Japan -

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