Vishay

64-1814-60 [Discontinued]SIHG64N65E-GE3 N-Channel MOSFET, 64 A, 650 V E Series, 3-Pin TO-247AC Vishay SIHG64N65E-GE3

Features

  • N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor. The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses

Spec

  • Quantity:1set(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:64 A
  • Maximum Drain Source Voltage:650 V
  • Maximum Drain Source Resistance:47 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:TO-247AC
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:520 W
  • Typical Input Capacitance @ Vds:7497 pF @ 100 V
  • CODE No.:178-0894
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Order No. 64-1814-60
Model No. SIHG64N65E-GE3
Standard price JPY: 68,730 USD: 427.64
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(50pieces)
  Discontinued
Stock in Japan -