64-1814-60 [Discontinued]SIHG64N65E-GE3 N-Channel MOSFET, 64 A, 650 V E Series, 3-Pin TO-247AC Vishay SIHG64N65E-GE3
Features
- N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor. The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:64 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:47 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-247AC
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:520 W
- Typical Input Capacitance @ Vds:7497 pF @ 100 V
- CODE No.:178-0894
| Order No. | 64-1814-60 | |
|---|---|---|
| Model No. | SIHG64N65E-GE3 | |
| Standard price |
JPY: 68,730
USD: 427.64
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SIHG64N65E-GE3 N-Channel MOSFET, 64 A, 650 V E Series, 3-Pin TO-247AC Vishay SIHG64N65E-GE3](https://aimg.as-1.co.jp/c/64/1814/60/64181460.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)