64-1814-57 SIHG33N60EF-GE3 N-Channel MOSFET, 33 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG33N60EF-GE3
Features
- N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:33 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:98 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-247AC
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:278 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-0893
| Order No. | 64-1814-57 | |
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| Model No. | SIHG33N60EF-GE3 | |
| Standard price |
JPY: 47,200
USD: 293.68
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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