64-1814-56 SIHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG70N60EF-GE3
FeaturesFeatures class="init">
64-1814-56 SIHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG70N60EF-GE3 【AXEL GLOBAL】 アズワン
Contact us
Vishay
64-1814-56 SIHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG70N60EF-GE3
Features
- N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:70 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:38 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-247AC
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:520 W
- Maximum Operating Temperature:+150 °C
- CODE No.:178-0891
-
Order No.Order No.ss="init">
64-1814-56 SIHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG70N60EF-GE3 【AXEL GLOBAL】 アズワン
Contact us
Vishay
64-1814-56 SIHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG70N60EF-GE3
特徴
- N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)
仕様
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:70 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:38 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-247AC
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:520 W
- Maximum Operating Temperature:+150 °C
- CODE No.:178-0891
-
Order No.
64-1814-56
Model No.
SIHG70N60EF-GE3
Standard price
JPY: 114,000
USD: 715.09
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init">
64-1814-56 SIHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG70N60EF-GE3 【AXEL GLOBAL】 アズワン
Contact us
Vishay
64-1814-56 SIHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG70N60EF-GE3
特徴
- N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)
仕様
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:70 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:38 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-247AC
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:520 W
- Maximum Operating Temperature:+150 °C
- CODE No.:178-0891
-
アズワン品番
64-1814-56
型番
SIHG70N60EF-GE3
標準価格
JPY: 114,000
USD: 715.09
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1set(50pieces)
在庫数
Supplier Stock
64-1814-56 SIHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG70N60EF-GE3
Features
- N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:70 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:38 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-247AC
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:520 W
- Maximum Operating Temperature:+150 °C
- CODE No.:178-0891
Order No.Order No.ss="init">
64-1814-56 SIHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG70N60EF-GE3特徴
仕様
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