64-1814-56 SIHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SIHG70N60EF-GE3
Features
- N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:70 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:38 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-247AC
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:520 W
- Maximum Operating Temperature:+150 °C
- CODE No.:178-0891
| Order No. | 64-1814-56 | |
|---|---|---|
| Model No. | SIHG70N60EF-GE3 | |
| Standard price |
JPY: 104,000
USD: 651.92
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(50pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|