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ON Semiconductor

64-1813-83　FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor　FDC6420C

Features

  • PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Spec

  • Quantity:1bag(25pieces)
  • Channel Type:N, P
  • Maximum Continuous Drain Current:2.2 A, 3 A
  • Maximum Drain Source Voltage:20 V
  • Maximum Drain Source Resistance:106 mΩ, 190 mΩ
  • Minimum Gate Threshold Voltage:0.5V
  • Maximum Gate Source Voltage:-12 V, +12 V
  • Package Type:SSOT
  • Mounting Type:Surface Mount
  • Transistor Configuration:Isolated
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:960 mW
  • Typical Turn-On Delay Time:5 ns, 9 ns
  • CODE No.:903-4147
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Order No. 64-1813-83
Model No. FDC6420C
Standard price JPY: 3,230 USD: 20.25
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(25pieces)
Stock in Japan
Supplier Stock

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