64-1813-82 FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor　FDC6420C 【AXEL GLOBAL】 アズワン

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64-1813-82　FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor　FDC6420C

特徴

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Spec

Quantity:1set(3000pieces)
Channel Type:N, P
Maximum Continuous Drain Current:2.2 A, 3 A
Maximum Drain Source Voltage:20 V
Maximum Drain Source Resistance:106 mΩ, 190 mΩ
Minimum Gate Threshold Voltage:0.5V
Maximum Gate Source Voltage:-12 V, +12 V
Package Type:SSOT
Mounting Type:Surface Mount
Transistor Configuration:Isolated
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:960 mW
Maximum Operating Temperature:+150 °C
CODE No.:166-2197

Order No.	64-1813-82
Model No.	FDC6420C
Standard price	JPY: 148,000 USD: 920.86 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1set(3000pieces)
Stock in Japan
Supplier Stock

This page is the page of FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

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For End-UserFor End-User"> 64-1813-82 FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor　FDC6420C 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

ON Semiconductor

64-1813-82　FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor　FDC6420C

印刷

特徴

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

仕様

Quantity:1set(3000pieces)
Channel Type:N, P
Maximum Continuous Drain Current:2.2 A, 3 A
Maximum Drain Source Voltage:20 V
Maximum Drain Source Resistance:106 mΩ, 190 mΩ
Minimum Gate Threshold Voltage:0.5V
Maximum Gate Source Voltage:-12 V, +12 V
Package Type:SSOT
Mounting Type:Surface Mount
Transistor Configuration:Isolated
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:960 mW
Maximum Operating Temperature:+150 °C
CODE No.:166-2197

アズワン品番	64-1813-82
型番	FDC6420C
標準価格	JPY: 148,000 USD: 920.86 Excange rate 1USD= 160.72JPY Valid price in Japan
入り数	1set(3000pieces)
在庫数
サプライヤ在庫

[$1]FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor[/$1]

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Other RequestsOther Requests 64-1813-82 FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor　FDC6420C 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

ON Semiconductor

64-1813-82　FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor　FDC6420C

印刷

特徴

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

仕様

Quantity:1set(3000pieces)
Channel Type:N, P
Maximum Continuous Drain Current:2.2 A, 3 A
Maximum Drain Source Voltage:20 V
Maximum Drain Source Resistance:106 mΩ, 190 mΩ
Minimum Gate Threshold Voltage:0.5V
Maximum Gate Source Voltage:-12 V, +12 V
Package Type:SSOT
Mounting Type:Surface Mount
Transistor Configuration:Isolated
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:960 mW
Maximum Operating Temperature:+150 °C
CODE No.:166-2197

アズワン品番	64-1813-82
型番	FDC6420C
標準価格	JPY: 148,000 USD: 920.86 Excange rate 1USD= 160.72JPY Valid price in Japan
入り数	1set(3000pieces)
在庫数
サプライヤ在庫

[$1]FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor[/$1]

Explore AXEL

How to use

Get to Know Us

Let Us Help You

Countries and RegionsASONEs="init"> 64-1813-82 FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor　FDC6420C 【AXEL GLOBAL】 アズワン

Listed products : 3 milion products

How to use

Quote Other Requests

ON Semiconductor

64-1813-82　FDC6420C Dual N/P-Channel MOSFET, 2.2 A, 3 A, 20 V PowerTrench, 6-Pin SSOT ON Semiconductor　FDC6420C

Features

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Spec

Quantity:1set(3000pieces)
Channel Type:N, P
Maximum Continuous Drain Current:2.2 A, 3 A
Maximum Drain Source Voltage:20 V
Maximum Drain Source Resistance:106 mΩ, 190 mΩ
Minimum Gate Threshold Voltage:0.5V
Maximum Gate Source Voltage:-12 V, +12 V
Package Type:SSOT
Mounting Type:Surface Mount
Transistor Configuration:Isolated
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:960 mW
Maximum Operating Temperature:+150 °C
CODE No.:166-2197

Order No.	64-1813-82
Model No.	FDC6420C
Standard price	JPY: 148,000 USD: 920.86 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1set(3000pieces)
Stock in Japan
Supplier Stock