64-1813-77 FDA24N40F N-Channel MOSFET, 23 A, 400 V UniFET, 3-Pin TO-3PN ON Semiconductor FDA24N40F
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64-1813-77 FDA24N40F N-Channel MOSFET, 23 A, 400 V UniFET, 3-Pin TO-3PN ON Semiconductor FDA24N40F 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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64-1813-77 FDA24N40F N-Channel MOSFET, 23 A, 400 V UniFET, 3-Pin TO-3PN ON Semiconductor FDA24N40F
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特徴
- UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:23 A
- Maximum Drain Source Voltage:400 V
- Maximum Drain Source Resistance:190 mΩ
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-3PN
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:High Voltage
- Maximum Power Dissipation:235 W
- Maximum Operating Temperature:+150 °C
- CODE No.:903-4134
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アズワン品番
64-1813-77
型番
FDA24N40F
標準価格
JPY: 4,460
USD: 27.98
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1bag(5pieces)
在庫数
サプライヤ在庫
64-1813-77 FDA24N40F N-Channel MOSFET, 23 A, 400 V UniFET, 3-Pin TO-3PN ON Semiconductor FDA24N40F
特徴
- UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:23 A
- Maximum Drain Source Voltage:400 V
- Maximum Drain Source Resistance:190 mΩ
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-3PN
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:High Voltage
- Maximum Power Dissipation:235 W
- Maximum Operating Temperature:+150 °C
- CODE No.:903-4134
| アズワン品番 | 64-1813-77 | |
|---|---|---|
| 型番 | FDA24N40F | |
| 標準価格 |
JPY: 4,460
USD: 27.98
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| 入り数 | 1bag(5pieces) | |
| 在庫数 |
|
|
| サプライヤ在庫 |
|
|