64-1813-73 [Discontinued]FCD4N60TM N-Channel MOSFET, 3.9 A, 600 V SuperFET, 3-Pin DPAK ON Semiconductor FCD4N60TM
Features
- SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor. Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability. Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.9 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:1.2 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:50 W
- Minimum Operating Temperature:-55 °C
- CODE No.:903-4128
| Order No. | 64-1813-73 | |
|---|---|---|
| Model No. | FCD4N60TM | |
| Standard price |
JPY: 1,180
USD: 7.40
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FCD4N60TM N-Channel MOSFET, 3.9 A, 600 V SuperFET, 3-Pin DPAK ON Semiconductor FCD4N60TM](https://aimg.as-1.co.jp/c/64/1813/73/64181373.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)