64-1813-73 ［Discontinued］FCD4N60TM N-Channel MOSFET, 3.9 A, 600 V SuperFET, 3-Pin DPAK ON Semiconductor FCD4N60TM
特徴
- SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor. Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability. Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.9 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:1.2 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:50 W
- Minimum Operating Temperature:-55 °C
- CODE No.:903-4128
| Order No. | 64-1813-73 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Model No. | FCD4N60TM | |||||||||||||||
Standard priceStandard pricess="init">
64-1813-73 ［Discontinued］FCD4N60TM N-Channel MOSFET, 3.9 A, 600 V SuperFET, 3-Pin DPAK ON Semiconductor FCD4N60TM特徴
仕様
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