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ON Semiconductor

64-1802-81　［Discontinued］ON Semiconductor NGTG35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247　NGTG35N65FL2WG

Features

  • IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

Spec

  • Quantity:1bag(5pieces)
  • Maximum Continuous Collector Current:70 A
  • Maximum Collector Emitter Voltage:650 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:300 W
  • Package Type:TO-247
  • Mounting Type:Through Hole
  • Channel Type:N
  • Pin Count:3
  • Transistor Configuration:Single
  • Length:16.26mm
  • Width:5.3mm
  • Height:21.08mm
  • Dimensions:16.26 x 5.3 x 21.08mm
  • Maximum Operating Temperature:+175 °C
  • CODE No.:900-8817
  •  
Order No. 64-1802-81
Model No. NGTG35N65FL2WG
Standard price JPY: 1,550 USD: 9.64
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(5pieces)
  Discontinued
Stock in Japan -

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