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Infineon

64-1795-87　IPB011N04NGATMA1 N-Channel MOSFET, 180 A, 40 V OptiMOS 3, 7-Pin D2PAK Infineon　IPB011N04NGATMA1

Features

  • Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

Spec

  • Quantity:1set(1000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:180 A
  • Maximum Drain Source Voltage:40 V
  • Maximum Drain Source Resistance:1.1 mΩ
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:250 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:145-9552
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Order No. 64-1795-87
Model No. IPB011N04NGATMA1
Standard price JPY: 331,000 USD: 2,074.85
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(1000pieces)
Stock in Japan
Supplier Stock

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