64-1795-82 ［Discontinued］IPB025N08N3GATMA1 N-Channel MOSFET, 120 A, 80 V OptiMOS 3, 3-Pin D2PAK Infineon IPB025N08N3GATMA1
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［Discontinued］IPB025N08N3GATMA1 N-Channel MOSFET, 120 A, 80 V OptiMOS 3, 3-Pin D2PAK Infineon IPB025N08N3GATMA1 64-1795-82 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1795-82 ［Discontinued］IPB025N08N3GATMA1 N-Channel MOSFET, 120 A, 80 V OptiMOS 3, 3-Pin D2PAK Infineon IPB025N08N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
Spec
- Quantity:1bag(2pieces)
- Channel Type:N
- Maximum Continuous Drain Current:120 A
- Maximum Drain Source Voltage:80 V
- Maximum Drain Source Resistance:3.9 mΩ
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:300 W
- Number of Elements per Chip:1
- CODE No.:898-6898
Order No. 64-1795-82 Model No. IPB025N08N3GATMA1 Standard price JPY: 1,160 USD: 7.22 Excange rate 1USD= 160.72JPY
Valid price in JapanQuantity 1bag(2pieces) 
Stock in Japan - -
