64-1795-71 IPB200N25N3GATMA1 N-Channel MOSFET, 64 A, 250 V OptiMOS 3, 3-Pin D2PAK Infineon IPB200N25N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1bag(2pieces)
- Channel Type:N
- Maximum Continuous Drain Current:64 A
- Maximum Drain Source Voltage:250 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:300 W
- Typical Turn-Off Delay Time:45 ns
- CODE No.:898-6870
| Order No. | 64-1795-71 | |
|---|---|---|
| Model No. | IPB200N25N3GATMA1 | |
| Standard price |
JPY: 2,800
USD: 17.42
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|