64-1794-22 ［Discontinued］IPD50R650CEATMA1 N-Channel MOSFET, 6.1 A, 550 V CoolMOS CE, 3-Pin DPAK Infineon IPD50R650CEATMA1
Features
- Infineon CoolMOS™ CE Power MOSFET
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6.1 A
- Maximum Drain Source Voltage:550 V
- Maximum Drain Source Resistance:650 mΩ
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:47 W
- Height:2.41mm
- CODE No.:165-8009
| Order No. | 64-1794-22 | |
|---|---|---|
| Model No. | IPD50R650CEATMA1 | |
| Standard price |
JPY: 138,000
USD: 865.04
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(2500pieces) | |
|
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| Stock in Japan | - | |